All IGBT. JJT50N65LE Datasheet

 

JJT50N65LE Datasheet and Replacement


   Type Designator: JJT50N65LE
   Type: IGBT + Anti-Parallel Diode
   Marking Code: T5065LE
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 454 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 73 nS
   Coesⓘ - Output Capacitance, typ: 176 pF
   Qg ⓘ - Total Gate Charge, typ: 160 nC
   Package: TO247
 

 JJT50N65LE substitution

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JJT50N65LE Datasheet (PDF)

 ..1. Size:4943K  jiejie micro
 jjt50n65le.pdf pdf_icon

JJT50N65LE

650V 50A Trench and Field Stop IGBTJJT50N65LEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.7VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High ruggedness performance. RoHS compliant.Applications: Inducting heating Resonant converters Microwave ovensPackag

 6.1. Size:3697K  jiejie micro
 jjt50n65uh.pdf pdf_icon

JJT50N65LE

650V 50A Trench and Field Stop IGBTJJT50N65UHKey performance:TO-3P V =650VCE I =50A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology.GC Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machin

 6.2. Size:3693K  jiejie micro
 jjt50n65ue.pdf pdf_icon

JJT50N65LE

650V 50A Trench and Field Stop IGBTJJT50N65UEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

 6.3. Size:4257K  jiejie micro
 jjt50n65he.pdf pdf_icon

JJT50N65LE

650V 50A Trench and Field Stop IGBTJJT50N65HEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib

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Keywords - JJT50N65LE transistor datasheet

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