JJT6N65STD Todos los transistores

 

JJT6N65STD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT6N65STD
   Tipo de transistor: IGBT + Diode + Built-in Zener Diodes
   Código de marcado: T0665STD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.3 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 18 nS
   Coesⓘ - Capacitancia de salida, typ: 25 pF
   Qgⓘ - Carga total de la puerta, typ: 19 nC
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de JJT6N65STD IGBT

   - Selección ⓘ de transistores por parámetros

 

JJT6N65STD Datasheet (PDF)

 ..1. Size:3749K  jiejie micro
 jjt6n65std.pdf pdf_icon

JJT6N65STD

650V 6A Trench and Field Stop IGBTJJT6N65STDKey performance: V =650VCETO-252 I =6A@T =100C C V =1.7 VCE(sat)CFeatures:G High ruggedness performanceE Very tight parameter distribution Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant

 5.1. Size:3794K  jiejie micro
 jjt6n65st.pdf pdf_icon

JJT6N65STD

650V 6A Trench and Field Stop IGBTJJT6N65STKey performance: V =650VCETO-252 I =6A@T =100C C V =1.7 VCE(sat)CFeatures: GE High ruggedness performance Very tight parameter distribution Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantAppli

 6.1. Size:3327K  jiejie micro
 jjt6n65ss.pdf pdf_icon

JJT6N65STD

650V 6A Trench and Field Stop IGBTJJT6N65SSKey performance: V =650VCETO-220F I =6A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performanceGCE Very tight parameter distribution Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantApp

 6.2. Size:3789K  jiejie micro
 jjt6n65sc.pdf pdf_icon

JJT6N65STD

650V 6A Trench and Field Stop IGBTJJT6N65SCTO-263Key performance: V =650VCE I =6A@T =100C C V =1.7 VCE(sat)CGFeatures:E High ruggedness performance Very tight parameter distribution Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantAppl

MOSTRAR MÁS

Otros transistores... JJT15N120SE , JJT15N65SC , JJT15N65SG , JJT15N65SS , JJT15N65SY , JJT6N65SC , JJT6N65SS , JJT6N65ST , FGH60N60SFD , JJT75N120SA , JJT75N65HCN , JJT75N65HE , , , , , .

 

 
Back to Top

 


 
.