All IGBT. JJT6N65STD Datasheet

 

JJT6N65STD Datasheet and Replacement


   Type Designator: JJT6N65STD
   Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
   Marking Code: T0665STD
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.3 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 25 pF
   Qg ⓘ - Total Gate Charge, typ: 19 nC
   Package: TO252
 

 JJT6N65STD substitution

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JJT6N65STD Datasheet (PDF)

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JJT6N65STD

650V 6A Trench and Field Stop IGBTJJT6N65STDKey performance: V =650VCETO-252 I =6A@T =100C C V =1.7 VCE(sat)CFeatures:G High ruggedness performanceE Very tight parameter distribution Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant

 5.1. Size:3794K  jiejie micro
 jjt6n65st.pdf pdf_icon

JJT6N65STD

650V 6A Trench and Field Stop IGBTJJT6N65STKey performance: V =650VCETO-252 I =6A@T =100C C V =1.7 VCE(sat)CFeatures: GE High ruggedness performance Very tight parameter distribution Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantAppli

 6.1. Size:3327K  jiejie micro
 jjt6n65ss.pdf pdf_icon

JJT6N65STD

650V 6A Trench and Field Stop IGBTJJT6N65SSKey performance: V =650VCETO-220F I =6A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performanceGCE Very tight parameter distribution Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantApp

 6.2. Size:3789K  jiejie micro
 jjt6n65sc.pdf pdf_icon

JJT6N65STD

650V 6A Trench and Field Stop IGBTJJT6N65SCTO-263Key performance: V =650VCE I =6A@T =100C C V =1.7 VCE(sat)CGFeatures:E High ruggedness performance Very tight parameter distribution Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantAppl

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Datasheet: JJT15N120SE , JJT15N65SC , JJT15N65SG , JJT15N65SS , JJT15N65SY , JJT6N65SC , JJT6N65SS , JJT6N65ST , FGH60N60SFD , JJT75N120SA , JJT75N65HCN , JJT75N65HE , , , , , .

Keywords - JJT6N65STD transistor datasheet

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