HCKZ75N65BH2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HCKZ75N65BH2
Tipo de transistor: IGBT + Diode
Código de marcado: K75H652
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 469 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.1 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 115 nS
Coesⓘ - Capacitancia de salida, typ: 244 pF
Qgⓘ - Carga total de la puerta, typ: 142 nC
Paquete / Cubierta: TO247-4
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HCKZ75N65BH2 Datasheet (PDF)
hckz75n65bh2.pdf
HCKZ75N65BH2@Trench-FS Cool-Watt IGBTHCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo
hckz75n65gh2.pdf
HCKZ75N65GH2@Trench-FS Cool-Watt IGBTHCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo
Otros transistores... 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , IRGB20B60PD1 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D , IGC06R60DE , APT15GF170BR .
History: IXGK35N120C | AOK40B60D
History: IXGK35N120C | AOK40B60D
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