HCKZ75N65BH2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HCKZ75N65BH2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 469 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 115 nS
Coesⓘ - Capacitancia de salida, typ: 244 pF
Paquete / Cubierta: TO247-4
Búsqueda de reemplazo de HCKZ75N65BH2 IGBT
HCKZ75N65BH2 datasheet
hckz75n65bh2.pdf
HCKZ75N65BH2 @ Trench-FS Cool-Watt IGBT HCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V , high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS technolo... See More ⇒
hckz75n65gh2.pdf
HCKZ75N65GH2 @ Trench-FS Cool-Watt IGBT HCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a SiC diode,has the characteristics of low V , high cesat junction temperature and strong robustness. It is very suitable for products with high switching frequency. Features CoolWatt@ Trench-FS technology Lo... See More ⇒
Otros transistores... 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , GT30G122 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D , IGC06R60DE , APT15GF170BR .
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