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HCKZ75N65BH2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCKZ75N65BH2
   Tipo de transistor: IGBT + Diode
   Código de marcado: K75H652
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 469 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.1 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 115 nS
   Coesⓘ - Capacitancia de salida, typ: 244 pF
   Qgⓘ - Carga total de la puerta, typ: 142 nC
   Paquete / Cubierta: TO247-4

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HCKZ75N65BH2 Datasheet (PDF)

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HCKZ75N65BH2

HCKZ75N65BH2 @ Trench-FS Cool-Watt IGBT HCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V , high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS technolo

 5.1. Size:1333K  cn vgsemi
 hckz75n65gh2.pdf pdf_icon

HCKZ75N65BH2

HCKZ75N65GH2 @ Trench-FS Cool-Watt IGBT HCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a SiC diode,has the characteristics of low V , high cesat junction temperature and strong robustness. It is very suitable for products with high switching frequency. Features CoolWatt@ Trench-FS technology Lo

Otros transistores... 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , GT30G122 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D , IGC06R60DE , APT15GF170BR .

 

 
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