40N60C3R Todos los transistores

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40N60C3R - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 40N60C3R

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 291W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2.2V

Tensión emisor-compuerta (Veg): 20V

Corriente del colector DC máxima (Ic): 75A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 56

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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40N60C3R Datasheet (PDF)

4.1. ixgh40n60c2 ixgt40n60c2.pdf Size:149K _ixys

40N60C3R
40N60C3R

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V G VCGR TJ = 25C to 150C; RGE = 1 M? 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25C (limited by leads) 75 A IC110 TC = 110C40 A I

4.2. ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf Size:162K _ixys

40N60C3R
40N60C3R

HiPerFASTTM IGBT IXGH40N60C2D1 VCES = 600V IXGT40N60C2D1 IC25 = 75A with Diode ? ? IXGJ40N60C2D1 VCE(SAT) ? 2.7V ? ? tfi(typ) = 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C (TAB) C E VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V TO-268 (D3) ( IXGT) VGEM Transient 30 V IC25 TC = 25C (li

4.3. ixgr40n60c.pdf Size:512K _ixys

40N60C3R
40N60C3R

VCES = 600 V IXGR 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGR 40N60CD1 ISOPLUS247TM VCE(sat) = 2.7 V (Electrically Isolated Backside) tfi(typ) = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Backside* IC25

4.4. ixgr40n60c2.pdf Size:177K _ixys

40N60C3R
40N60C3R

IXGR 40N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 40N60C2D1 IC25 = 56 A ISOPLUS247TM VCE(SAT) = 2.7 V C2-Class High Speed IGBTs tfi(typ = 32 ns (Electrically Isolated Back Surface) Preliminary Data Sheet ISOPLUS 247TM (IXGR) IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C ISOLATED TAB E VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Conti

4.5. ixgj40n60c2d1.pdf Size:168K _igbt

40N60C3R
40N60C3R

HiPerFASTTM IGBTs VCES = 600V IXGT40N60C2D1 IC110 = 40A w/ Diode IXGJ40N60C2D1 ≤ ≤ VCE(SAT) ≤ 2.7V ≤ ≤ IXGH40N60C2D1 tfi(typ) = 32ns C2-Class High Speed IGBTs TO-268 (IXGT) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-268 (IXGJ) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V

4.6. ixgh40n60c2d1.pdf Size:168K _igbt

40N60C3R
40N60C3R

HiPerFASTTM IGBTs VCES = 600V IXGT40N60C2D1 IC110 = 40A w/ Diode IXGJ40N60C2D1 ≤ ≤ VCE(SAT) ≤ 2.7V ≤ ≤ IXGH40N60C2D1 tfi(typ) = 32ns C2-Class High Speed IGBTs TO-268 (IXGT) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-268 (IXGJ) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V

4.7. ixgh40n60c2.pdf Size:145K _igbt

40N60C3R
40N60C3R

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 (IXGH) IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 1

4.8. ixgh40n60c.pdf Size:122K _igbt

40N60C3R
40N60C3R

VCES = 600 V IXGH 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C LightspeedTM Series VCE(sat) = 2.5 V tfi typ = 75 ns Preliminary Data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C75 A TO-247 AD (IXGH) IC110 TC = 11

4.9. ixgr40n60cd1.pdf Size:510K _igbt_a

40N60C3R
40N60C3R

VCES = 600 V IXGR 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGR 40N60CD1 ISOPLUS247TM VCE(sat) = 2.7 V (Electrically Isolated Backside) tfi(typ) = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Back

4.10. ixsx40n60cd1.pdf Size:45K _igbt_a

40N60C3R
40N60C3R

IXSK 40N60CD1 IGBT with Diode VCES = 600 V IXSX 40N60CD1 PLUS247TM package IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability tfi(typ) = 70 ns Preliminary data Symbol Test Conditions Maximum Ratings PLUS 247TM (IXSX) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) G VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C, li

4.11. ixgt40n60c2d1.pdf Size:168K _igbt_a

40N60C3R
40N60C3R

HiPerFASTTM IGBTs VCES = 600V IXGT40N60C2D1 IC110 = 40A w/ Diode IXGJ40N60C2D1 ≤ ≤ VCE(SAT) ≤ 2.7V ≤ ≤ IXGH40N60C2D1 tfi(typ) = 32ns C2-Class High Speed IGBTs TO-268 (IXGT) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-268 (IXGJ) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V

4.12. ixgt40n60c2.pdf Size:145K _igbt_a

40N60C3R
40N60C3R

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 (IXGH) IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 1

4.13. ixgt40n60c.pdf Size:122K _igbt_a

40N60C3R
40N60C3R

VCES = 600 V IXGH 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C LightspeedTM Series VCE(sat) = 2.5 V tfi typ = 75 ns Preliminary Data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C75 A TO-247 AD (IXGH) IC110 TC = 11

4.14. ixgr40n60c.pdf Size:510K _igbt_a

40N60C3R
40N60C3R

VCES = 600 V IXGR 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGR 40N60CD1 ISOPLUS247TM VCE(sat) = 2.7 V (Electrically Isolated Backside) tfi(typ) = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Back

4.15. ixsk40n60cd1.pdf Size:45K _igbt_a

40N60C3R
40N60C3R

IXSK 40N60CD1 IGBT with Diode VCES = 600 V IXSX 40N60CD1 PLUS247TM package IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability tfi(typ) = 70 ns Preliminary data Symbol Test Conditions Maximum Ratings PLUS 247TM (IXSX) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) G VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C, li

4.16. ixgr40n60c2d1.pdf Size:173K _igbt_a

40N60C3R
40N60C3R

IXGR 40N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 40N60C2D1 IC25 = 56 A ISOPLUS247TM VCE(SAT) = 2.7 V C2-Class High Speed IGBTs tfi(typ = 32 ns (Electrically Isolated Back Surface) Preliminary Data Sheet ISOPLUS 247TM (IXGR) IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C ISOLATED TAB E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VG

4.17. ixsr40n60cd1.pdf Size:38K _igbt_a

40N60C3R
40N60C3R

IXSR 40N60CD1 VCES = 600 V IGBT with Diode IC25 = 62 A ISOPLUS247TM VCE(SAT) = 2.5 V (Electrically Isolated Backside) tfi(typ) = 70 ns Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXSR) E 153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C E I

4.18. ixgr40n60c2.pdf Size:173K _igbt_a

40N60C3R
40N60C3R

IXGR 40N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 40N60C2D1 IC25 = 56 A ISOPLUS247TM VCE(SAT) = 2.7 V C2-Class High Speed IGBTs tfi(typ = 32 ns (Electrically Isolated Back Surface) Preliminary Data Sheet ISOPLUS 247TM (IXGR) IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C ISOLATED TAB E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VG

Otros transistores... 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , IRGP4062D , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D , IGC06R60DE , APT15GF170BR .

 


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Introduzca al menos 1 números o letras