HCKZ75N65BH2 Todos los transistores

 

HCKZ75N65BH2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HCKZ75N65BH2

Tipo de transistor: IGBT + Diode

Código de marcado: K75H652

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Máxima potencia disipada (Pc), W: 469

Tensión máxima colector-emisor |Vce|, V: 650

Tensión máxima puerta-emisor |Vge|, V: 20

Colector de Corriente Continua a 25℃ |Ic|, A: 150

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8

Tensión máxima de puerta-umbral |VGE(th)|, V: 6.1

Temperatura máxima de unión (Tj), ℃: 175

Tiempo de subida (tr), typ, nS: 115

Capacitancia de salida (Cc), typ, pF: 244

Carga total de la puerta (Qg), typ, nC: 142

Paquete / Cubierta: TO247-4

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HCKZ75N65BH2 Datasheet (PDF)

 ..1. Size:1281K  cn vgsemi
hckz75n65bh2.pdf

HCKZ75N65BH2
HCKZ75N65BH2

HCKZ75N65BH2@Trench-FS Cool-Watt IGBTHCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo

 5.1. Size:1333K  cn vgsemi
hckz75n65gh2.pdf

HCKZ75N65BH2
HCKZ75N65BH2

HCKZ75N65GH2@Trench-FS Cool-Watt IGBTHCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo

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