All IGBT. HCKZ75N65BH2 Datasheet


HCKZ75N65BH2 IGBT. Datasheet pdf. Equivalent

Type Designator: HCKZ75N65BH2

Type: IGBT + Anti-Parallel Diode

Marking Code: K75H652

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 469

Maximum Collector-Emitter Voltage |Vce|, V: 650

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 150

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.1

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 115

Collector Capacity (Cc), typ, pF: 244

Total Gate Charge (Qg), typ, nC: 142

Package: TO247-4

HCKZ75N65BH2 Transistor Equivalent Substitute - IGBT Cross-Reference Search


HCKZ75N65BH2 Datasheet (PDF)

 ..1. Size:1281K  cn vgsemi


HCKZ75N65BH2@Trench-FS Cool-Watt IGBTHCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo

Datasheet: 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , FGT313 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D , IGC06R60DE , APT15GF170BR .


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