HCKZ75N65BH2 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

HCKZ75N65BH2 Specs and Replacement

Type Designator: HCKZ75N65BH2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 469 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 115 nS

Coesⓘ - Output Capacitance, typ: 244 pF

Package: TO247-4

HCKZ75N65BH2 Substitution

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HCKZ75N65BH2 datasheet

..1. Size:1281K cn vgsemi
hckz75n65bh2.pdf pdf_icon

HCKZ75N65BH2 @ Trench-FS Cool-Watt IGBT HCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V , high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS technolo... See More ⇒

5.1. Size:1333K cn vgsemi
hckz75n65gh2.pdf pdf_icon

HCKZ75N65GH2 @ Trench-FS Cool-Watt IGBT HCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a SiC diode,has the characteristics of low V , high cesat junction temperature and strong robustness. It is very suitable for products with high switching frequency. Features CoolWatt@ Trench-FS technology Lo... See More ⇒

Specs: 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , GT30G122 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D , IGC06R60DE , APT15GF170BR .