HCKZ75N65BH2 IGBT. Datasheet pdf. Equivalent
Type Designator: HCKZ75N65BH2
Type: IGBT + Anti-Parallel Diode
Marking Code: K75H652
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 469 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.1 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 115 nS
Coesⓘ - Output Capacitance, typ: 244 pF
Qgⓘ - Total Gate Charge, typ: 142 nC
Package: TO247-4
HCKZ75N65BH2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
HCKZ75N65BH2 Datasheet (PDF)
hckz75n65bh2.pdf
HCKZ75N65BH2@Trench-FS Cool-Watt IGBTHCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo
hckz75n65gh2.pdf
HCKZ75N65GH2@Trench-FS Cool-Watt IGBTHCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo
Datasheet: 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , STGW60V60DF , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D , IGC06R60DE , APT15GF170BR .
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