All IGBT. HCKZ75N65BH2 Datasheet

 

HCKZ75N65BH2 Datasheet and Replacement


   Type Designator: HCKZ75N65BH2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K75H652
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 469 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.1 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 115 nS
   Coesⓘ - Output Capacitance, typ: 244 pF
   Qg ⓘ - Total Gate Charge, typ: 142 nC
   Package: TO247-4
 

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HCKZ75N65BH2 Datasheet (PDF)

 ..1. Size:1281K  cn vgsemi
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HCKZ75N65BH2

HCKZ75N65BH2@Trench-FS Cool-Watt IGBTHCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo

 5.1. Size:1333K  cn vgsemi
 hckz75n65gh2.pdf pdf_icon

HCKZ75N65BH2

HCKZ75N65GH2@Trench-FS Cool-Watt IGBTHCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo

Datasheet: 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , IRGB20B60PD1 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D , IGC06R60DE , APT15GF170BR .

History: STGW30V60DF | CRG15T60A03L | HYG30P120H1K1

Keywords - HCKZ75N65BH2 transistor datasheet

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