IXSA12N60AU1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXSA12N60AU1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 100 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Encapsulados: TO263
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IXSA12N60AU1 datasheet
ixsa12n60au1.pdf
IXSA 12N60AU1 VCES = 600 V Low VCE(sat) IGBT IC25 = 24 A with Diode VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-263AA VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G VGES Continuous 20 V E TAB VGEM Transient 30 V G = Gate, C = Collector, IC25 TC = 25 C24 A E = Emitter
ixsa10n60b2d1 ixsp10n60b2d1.pdf
High Speed IGBT IXSA 10N60B2D1 VCES = 600 V IXSP 10N60B2D1 with Diode IC25 = 20 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-263 (IXSA) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V E C (TAB) IC25 TC = 25 C20 A TO-220AB (IXSP)
ixsa16n60 ixsp16n60.pdf
Preliminary Data Sheet IXSA 16N60 VCES = 600V Low VCE(sat) IGBT IXSP 16N60 IC25 = 16A Short Circuit SOA Capability VCE(sat)typ = 1.8V TO-220AB(IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263AA IC25 TC = 25 C32 A IC90 TC = 90 C16 A ICM TC = 25
ixsa15n120b.pdf
Advance Technical Information IXSA 15N120B VCES =1200 V HIGH Voltage IGBT IXSP 15N120B IC25 = 30 A VCE(sat) = 3.4 V "S" Series - Improved SCSOA Capability TO-220AB (IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C30 A TO-263 AA (
Otros transistores... IXGT31N60 , IXGT31N60D1 , IXGT32N60BD1 , IXGT32N60CD1 , IXGT50N60B , IXGT60N60 , IXGX120N60B , IXGX50N60AU1 , G50T65D , IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , IXSH15N120AU1 , IXSH15N120B , IXSH16N60U1 , IXSH20N60AU1 , IXSH20N60U1 .
History: IKW75N60H3 | VBGN40N60
History: IKW75N60H3 | VBGN40N60
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