All IGBT. IXSA12N60AU1 Datasheet

 

IXSA12N60AU1 Datasheet and Replacement


   Type Designator: IXSA12N60AU1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 24 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Package: TO263
      - IGBT Cross-Reference

 

IXSA12N60AU1 Datasheet (PDF)

 ..1. Size:171K  ixys
 ixsa12n60au1.pdf pdf_icon

IXSA12N60AU1

IXSA 12N60AU1 VCES = 600 VLow VCE(sat) IGBTIC25 = 24 Awith DiodeVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-263AAVCES TJ = 25 C to 150 C 600 VVCGR TJ = 25 C to 150 C; RGE = 1 M 600 VGVGES Continuous 20 VETABVGEM Transient 30 VG = Gate, C = Collector,IC25 TC = 25 C24 AE = Emitter

 9.1. Size:589K  ixys
 ixsa10n60b2d1 ixsp10n60b2d1.pdf pdf_icon

IXSA12N60AU1

High Speed IGBT IXSA 10N60B2D1VCES = 600 VIXSP 10N60B2D1with Diode IC25 = 20 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetD1Symbol Test Conditions Maximum RatingsTO-263 (IXSA)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VEC (TAB)IC25 TC = 25C20 ATO-220AB (IXSP)

 9.2. Size:54K  ixys
 ixsa16n60 ixsp16n60.pdf pdf_icon

IXSA12N60AU1

Preliminary Data SheetIXSA 16N60 VCES = 600VLow VCE(sat) IGBT IXSP 16N60IC25 = 16AShort Circuit SOA CapabilityVCE(sat)typ = 1.8VTO-220AB(IXSP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263AAIC25 TC = 25C32 AIC90 TC = 90C16 AICM TC = 25

 9.3. Size:82K  ixys
 ixsa15n120b.pdf pdf_icon

IXSA12N60AU1

Advance Technical InformationIXSA 15N120B VCES =1200 VHIGH Voltage IGBTIXSP 15N120B IC25 = 30 AVCE(sat) = 3.4 V"S" Series - Improved SCSOA CapabilityTO-220AB (IXSP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VC (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C30 ATO-263 AA (

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Datasheet: IXGT31N60 , IXGT31N60D1 , IXGT32N60BD1 , IXGT32N60CD1 , IXGT50N60B , IXGT60N60 , IXGX120N60B , IXGX50N60AU1 , GT30J127 , IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , IXSH15N120AU1 , IXSH15N120B , IXSH16N60U1 , IXSH20N60AU1 , IXSH20N60U1 .

Keywords - IXSA12N60AU1 transistor datasheet

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