MGB15N35CLT4 Todos los transistores

 

MGB15N35CLT4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MGB15N35CLT4
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 136 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 380 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 22 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 5000 nS
   Coesⓘ - Capacitancia de salida, typ: 130 pF
   Paquete / Cubierta: D2PAK
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MGB15N35CLT4 Datasheet (PDF)

 ..1. Size:99K  1
 mgb15n35clt4 mgp15n35cl.pdf pdf_icon

MGB15N35CLT4

MGP15N35CL,MGB15N35CL,MGC15N35CLInternally ClampedN-Channel IGBThttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and OverVoltage clampedNCHANNEL IGBTprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and15 A, 350

 8.1. Size:91K  onsemi
 mgp15n40cl mgb15n40cl.pdf pdf_icon

MGB15N35CLT4

MGP15N40CL,MGB15N40CLPreferred DeviceIgnition IGBT15 Amps, 410 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) features15 AMPERESmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary uses410 VOLTS (Clamped)include Ignition, Direct Fuel Injec

Otros transistores... KP810V , MDI100-12A3 , MDI145-12A3 , MDI150-12A4 , MDI200-12A4 , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , FGH60N60SMD , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL .

History: SKM300GAY123D | SKM300GAR123D | MMG200DR120B | IXGT30N60C3D1 | VS-GB75LP120N | DL2G75SH6A | IRGP4068DPBF

 

 
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