All IGBT. MGB15N35CLT4 Datasheet

 

MGB15N35CLT4 Datasheet and Replacement


   Type Designator: MGB15N35CLT4
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 136 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 380 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 22 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 5000 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Package: D2PAK
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MGB15N35CLT4 Datasheet (PDF)

 ..1. Size:99K  1
 mgb15n35clt4 mgp15n35cl.pdf pdf_icon

MGB15N35CLT4

MGP15N35CL,MGB15N35CL,MGC15N35CLInternally ClampedN-Channel IGBThttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and OverVoltage clampedNCHANNEL IGBTprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and15 A, 350

 8.1. Size:91K  onsemi
 mgp15n40cl mgb15n40cl.pdf pdf_icon

MGB15N35CLT4

MGP15N40CL,MGB15N40CLPreferred DeviceIgnition IGBT15 Amps, 410 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) features15 AMPERESmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary uses410 VOLTS (Clamped)include Ignition, Direct Fuel Injec

Datasheet: KP810V , MDI100-12A3 , MDI145-12A3 , MDI150-12A4 , MDI200-12A4 , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , FGH60N60SMD , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL .

History: IXYH20N120C3D1 | 1MB08D-120 | IXGT40N60C2D1 | DM2G75SH6A | SKM400GAR062D | IXYH40N65B3 | IXGH64N60A3

Keywords - MGB15N35CLT4 transistor datasheet

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