MGB15N35CLT4 IGBT. Datasheet pdf. Equivalent
Type Designator: MGB15N35CLT4
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 136 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 380 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 22 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 2.1 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 5000 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Qgⓘ - Total Gate Charge, typ: TBD nC
Package: D2PAK
MGB15N35CLT4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
MGB15N35CLT4 Datasheet (PDF)
mgb15n35clt4 mgp15n35cl.pdf
MGP15N35CL,MGB15N35CL,MGC15N35CLInternally ClampedN-Channel IGBThttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and OverVoltage clampedNCHANNEL IGBTprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and15 A, 350
mgp15n40cl mgb15n40cl.pdf
MGP15N40CL,MGB15N40CLPreferred DeviceIgnition IGBT15 Amps, 410 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) features15 AMPERESmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary uses410 VOLTS (Clamped)include Ignition, Direct Fuel Injec
Datasheet: KP810V , MDI100-12A3 , MDI145-12A3 , MDI150-12A4 , MDI200-12A4 , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , FGH60N60SMD , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL .
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