MGB15N35CLT4 Specs and Replacement
Type Designator: MGB15N35CLT4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 136 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 380 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 22 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
tr ⓘ - Rise Time, typ: 5000 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: D2PAK
MGB15N35CLT4 Substitution - IGBTⓘ Cross-Reference Search
MGB15N35CLT4 datasheet
mgb15n35clt4 mgp15n35cl.pdf
MGP15N35CL, MGB15N35CL, MGC15N35CL Internally Clamped N-Channel IGBT http //onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped N CHANNEL IGBT protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 15 A, 350... See More ⇒
mgp15n40cl mgb15n40cl.pdf
MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK http //onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features 15 AMPERES monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses 410 VOLTS (Clamped) include Ignition, Direct Fuel Injec... See More ⇒
Specs: KP810V, MDI100-12A3, MDI145-12A3, MDI150-12A4, MDI200-12A4, MDI300-12A4, MDI550-12A4, MDI75-12A3, RJP30H2A, MGB15N40CL, MGP11N60E, MGP11N60ED, MGP14N60E, MGP15N35CL, MGP15N38CL, MGP15N40CL, MGP15N43CL
Keywords - MGB15N35CLT4 transistor spec
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History: MDI75-12A3
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