MGP20N60U IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGP20N60U
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 112 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 31 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
trⓘ - Tiempo de subida, typ: 45 nS
Coesⓘ - Capacitancia de salida, typ: 99 pF
Encapsulados: TO220
Búsqueda de reemplazo de MGP20N60U IGBT
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MGP20N60U datasheet
mgp20n60u.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N60U/D Designer's Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 20 A @ 90 C voltage blocking capability. It also provide
mgp20n60urev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N60U/D Product Preview MGP20N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 20 A @ 90 C voltage blocking capability. It also provides fast sw
mgp20n14cl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitry for
mgp20n14clrev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitry for
Otros transistores... MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , RJP63F3DPP-M0 , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D .
History: BT40T120CKF | SKM195GB062D
History: BT40T120CKF | SKM195GB062D
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