MGP20N60U Todos los transistores

 

MGP20N60U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MGP20N60U
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 112 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 31 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 45 nS
   Coesⓘ - Capacitancia de salida, typ: 99 pF
   Qgⓘ - Carga total de la puerta, typ: 57 nC
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

MGP20N60U Datasheet (PDF)

 ..1. Size:125K  motorola
 mgp20n60u.pdf pdf_icon

MGP20N60U

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N60U/DDesigner's Data SheetMGP20N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high20 A @ 90Cvoltageblocking capability. It also provide

 0.1. Size:120K  motorola
 mgp20n60urev0.pdf pdf_icon

MGP20N60U

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N60U/DProduct PreviewMGP20N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high20 A @ 90Cvoltageblocking capability. It also provides fast sw

 8.1. Size:82K  motorola
 mgp20n14cl.pdf pdf_icon

MGP20N60U

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N14CL/DProduct PreviewMGP20N14CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitry for

 8.2. Size:77K  motorola
 mgp20n14clrev1.pdf pdf_icon

MGP20N60U

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N14CL/DProduct PreviewMGP20N14CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitry for

MOSTRAR MÁS

Otros transistores... MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , FGPF4633 , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D .

History: MWI150-12T8T | IXGT20N60B | IXGX120N60C2

 

 
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