MGP20N60U IGBT. Datasheet pdf. Equivalent

   Type Designator: MGP20N60U
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 112 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 31 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 99 pF
   Qgⓘ - Total Gate Charge, typ: 57 nC
   Package: TO220

MGP20N60U Transistor Equivalent Substitute - IGBT Cross-Reference Search

MGP20N60U Datasheet (PDF)

..1. Size:125K motorola
mgp20n60u.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N60U/DDesigner's Data SheetMGP20N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high20 A @ 90Cvoltageblocking capability. It also provide

0.1. Size:120K motorola
mgp20n60urev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N60U/DProduct PreviewMGP20N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high20 A @ 90Cvoltageblocking capability. It also provides fast sw

8.1. Size:82K motorola
mgp20n14cl.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N14CL/DProduct PreviewMGP20N14CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitry for

8.2. Size:77K motorola
mgp20n14clrev1.pdf

8.3. Size:133K motorola
mgp20n40clrev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N40CL/DAdvanced InformationMGP20N40CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitr

8.4. Size:200K motorola
mgp20n35clrev0xx.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N35CL/DAdvanced InformationMGP20N35CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitr

8.5. Size:176K motorola
mgp20n35cl.pdf