MGP20N60U Specs and Replacement
Type Designator: MGP20N60U
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 112 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 31 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
tr ⓘ - Rise Time, typ: 45 nS
Coesⓘ - Output Capacitance, typ: 99 pF
Package: TO220
MGP20N60U Substitution - IGBT ⓘ Cross-Reference Search
MGP20N60U datasheet
mgp20n60u.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N60U/D Designer's Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 20 A @ 90 C voltage blocking capability. It also provide... See More ⇒
mgp20n60urev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N60U/D Product Preview MGP20N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 20 A @ 90 C voltage blocking capability. It also provides fast sw... See More ⇒
mgp20n14cl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitry for... See More ⇒
mgp20n14clrev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitry for... See More ⇒
Specs: MGP15N35CL, MGP15N38CL, MGP15N40CL, MGP15N43CL, MGP15N60U, MGP20N14CL, MGP20N35CL, MGP20N40CL, RJP63F3DPP-M0, MGP21N60E, MGP4N60E, MGP4N60ED, MGP7N60E, MGP7N60ED, MGS05N60D, MGS13002D, MGV12N120D
Keywords - MGP20N60U transistor spec
MGP20N60U cross reference
MGP20N60U equivalent finder
MGP20N60U lookup
MGP20N60U substitution
MGP20N60U replacement
History: ISL9V2040S3S | FGA40S65SH | JT05N065VAD | SKM200GAR123D | JT040K065WED | AOK20B120E1 | IXXK100N60B3H1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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