MGP20N60U - аналоги, основные параметры, даташиты
Наименование: MGP20N60U
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 112 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 31 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.4 V @25℃
tr ⓘ - Время нарастания типовое: 45 nS
Coesⓘ - Выходная емкость, типовая: 99 pF
Тип корпуса: TO220
Аналог (замена) для MGP20N60U
- подбор ⓘ IGBT транзистора по параметрам
MGP20N60U даташит
mgp20n60u.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N60U/D Designer's Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 20 A @ 90 C voltage blocking capability. It also provide
mgp20n60urev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N60U/D Product Preview MGP20N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 20 A @ 90 C voltage blocking capability. It also provides fast sw
mgp20n14cl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitry for
mgp20n14clrev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitry for
Другие IGBT... MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , RJP63F3DPP-M0 , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D .
History: STGD18N40LZ | IXXK200N65B4
History: STGD18N40LZ | IXXK200N65B4
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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