MGP21N60E Todos los transistores

 

MGP21N60E IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MGP21N60E

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 142 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 31 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Coesⓘ - Capacitancia de salida, typ: 146 pF

Encapsulados: TO220

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MGP21N60E datasheet

 ..1. Size:127K  motorola
 mgp21n60e.pdf pdf_icon

MGP21N60E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP21N60E/D Designer's Data Sheet MGP21N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 21 A @ 90 C voltage blocking capability. Its new 600 V I

 0.1. Size:127K  motorola
 mgp21n60erev0.pdf pdf_icon

MGP21N60E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP21N60E/D Designer's Data Sheet MGP21N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 21 A @ 90 C voltage blocking capability. Its new 600 V I

Otros transistores... MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , FGH60N60SFD , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 .

History: JNG15T120HS | SGT15T60SD1T | SGT10T60SDM1P7 | KWRFF100R12SWM | KWRFF40R12SWM | MG100HF12MIC1 | GA200SA60U

 

 

 

 

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