MGP21N60E Datasheet and Replacement
Type Designator: MGP21N60E
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 142 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 31 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 146 pF
Package: TO220
- IGBT Cross-Reference
MGP21N60E Datasheet (PDF)
mgp21n60e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP21N60E/DDesigner's Data SheetMGP21N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high21 A @ 90Cvoltageblocking capability. Its new 600 V I
mgp21n60erev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP21N60E/DDesigner's Data SheetMGP21N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high21 A @ 90Cvoltageblocking capability. Its new 600 V I
Datasheet: MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , IKW75N60T , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 .
History: MWI35-12T7T | SKP15N60
Keywords - MGP21N60E transistor datasheet
MGP21N60E cross reference
MGP21N60E equivalent finder
MGP21N60E lookup
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History: MWI35-12T7T | SKP15N60
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