MGP21N60E PDF and Equivalents Search

 

MGP21N60E Specs and Replacement

Type Designator: MGP21N60E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 142 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 31 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 146 pF

Package: TO220

 MGP21N60E Substitution

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MGP21N60E datasheet

 ..1. Size:127K  motorola
 mgp21n60e.pdf pdf_icon

MGP21N60E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP21N60E/D Designer's Data Sheet MGP21N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 21 A @ 90 C voltage blocking capability. Its new 600 V I... See More ⇒

 0.1. Size:127K  motorola
 mgp21n60erev0.pdf pdf_icon

MGP21N60E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP21N60E/D Designer's Data Sheet MGP21N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 21 A @ 90 C voltage blocking capability. Its new 600 V I... See More ⇒

Specs: MGP15N38CL, MGP15N40CL, MGP15N43CL, MGP15N60U, MGP20N14CL, MGP20N35CL, MGP20N40CL, MGP20N60U, FGH60N60SFD, MGP4N60E, MGP4N60ED, MGP7N60E, MGP7N60ED, MGS05N60D, MGS13002D, MGV12N120D, MGW12N120

Keywords - MGP21N60E transistor spec

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