All IGBT. MGP21N60E Datasheet

 

MGP21N60E Datasheet and Replacement


   Type Designator: MGP21N60E
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 142 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 31 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 146 pF
   Qg ⓘ - Total Gate Charge, typ: 86 nC
   Package: TO220
 

 MGP21N60E substitution

   - IGBT ⓘ Cross-Reference Search

 

MGP21N60E Datasheet (PDF)

 ..1. Size:127K  motorola
 mgp21n60e.pdf pdf_icon

MGP21N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP21N60E/DDesigner's Data SheetMGP21N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high21 A @ 90Cvoltageblocking capability. Its new 600 V I

 0.1. Size:127K  motorola
 mgp21n60erev0.pdf pdf_icon

MGP21N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP21N60E/DDesigner's Data SheetMGP21N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high21 A @ 90Cvoltageblocking capability. Its new 600 V I

Datasheet: MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , IKW75N60T , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 .

History: APT40GP90B2DF2

Keywords - MGP21N60E transistor datasheet

 MGP21N60E cross reference
 MGP21N60E equivalent finder
 MGP21N60E lookup
 MGP21N60E substitution
 MGP21N60E replacement

 

 
Back to Top

 


 
.