MGP7N60ED - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGP7N60ED
Tipo de transistor: IGBT + Diode + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 81 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 24 nS
Coesⓘ - Capacitancia de salida, typ: 60 pF
Qgⓘ - Carga total de la puerta, typ: 27.2 nC
Paquete / Cubierta: TO220
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MGP7N60ED Datasheet (PDF)
mgp7n60ed.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP7N60ED/DDesigner's Data SheetMGP7N60EDInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO2207.0 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged10 A @ 25Cwith a soft recovery ultrafast rectifier and uses an ad
mgp7n60erev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP7N60E/DDesigner's Data SheetMGP7N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high9.0 A @ 90Cvoltageblocking capability. Its new 600 V IG
mgp7n60e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP7N60E/DDesigner's Data SheetMGP7N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high7.0 A @ 90Cvoltageblocking capability. Its new 600 V IG
Otros transistores... MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MBQ50T65FDSC , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2