MGP7N60ED Datasheet and Replacement
Type Designator: MGP7N60ED
Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 81 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 24 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Qgⓘ - Total Gate Charge, typ: 27.2 nC
Package: TO220
- IGBT Cross-Reference
MGP7N60ED Datasheet (PDF)
mgp7n60ed.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP7N60ED/DDesigner's Data SheetMGP7N60EDInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO2207.0 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged10 A @ 25Cwith a soft recovery ultrafast rectifier and uses an ad
mgp7n60erev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP7N60E/DDesigner's Data SheetMGP7N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high9.0 A @ 90Cvoltageblocking capability. Its new 600 V IG
mgp7n60e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP7N60E/DDesigner's Data SheetMGP7N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high7.0 A @ 90Cvoltageblocking capability. Its new 600 V IG
Datasheet: MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , GT30J127 , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D .
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