MGV12N120D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGV12N120D
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 123 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 114 nS
Coesⓘ - Capacitancia de salida, typ: 126 pF
Qgⓘ - Carga total de la puerta, typ: 31 nC
Paquete / Cubierta: TO268AA
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MGV12N120D Datasheet (PDF)
mgv12n120d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGV12N120D/DProduct Preview Data SheetMGV12N120DInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel Enhancement Mode Silicon GateIGBT & DIODE IN D3PAK12 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultrafast rectifier and uses an adva
mgv12n120drev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGV12N120D/DProduct Preview Data SheetMGV12N120DInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel Enhancement Mode Silicon GateIGBT & DIODE IN D3PAK12 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultrafast rectifier and uses an adva
Otros transistores... MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , FGH60N60SFD , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D .
History: MMG100S120UA6TC | NGB18N40CLB
History: MMG100S120UA6TC | NGB18N40CLB
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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