MGV12N120D Todos los transistores

 

MGV12N120D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MGV12N120D

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 123 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃

trⓘ - Tiempo de subida, typ: 114 nS

Coesⓘ - Capacitancia de salida, typ: 126 pF

Encapsulados: TO268AA

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MGV12N120D datasheet

 ..1. Size:83K  motorola
 mgv12n120d.pdf pdf_icon

MGV12N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra fast rectifier and uses an adva

 0.1. Size:79K  motorola
 mgv12n120drev0.pdf pdf_icon

MGV12N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra fast rectifier and uses an adva

Otros transistores... MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , IRG7R313U , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D .

History: MGP4N60ED | MGW12N120 | SGT20T135QR1P7 | MGW14N60ED | SGT20T60SD1S | SGT75T65SDM1P4 | MGW20N120

 

 

 

 

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