MGV12N120D IGBT. Datasheet pdf. Equivalent
Type Designator: MGV12N120D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 123 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 114 nS
Coesⓘ - Output Capacitance, typ: 126 pF
Qgⓘ - Total Gate Charge, typ: 31 nC
Package: TO268AA
MGV12N120D Transistor Equivalent Substitute - IGBT Cross-Reference Search
MGV12N120D Datasheet (PDF)
mgv12n120d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGV12N120D/DProduct Preview Data SheetMGV12N120DInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel Enhancement Mode Silicon GateIGBT & DIODE IN D3PAK12 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultrafast rectifier and uses an adva
mgv12n120drev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGV12N120D/DProduct Preview Data SheetMGV12N120DInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel Enhancement Mode Silicon GateIGBT & DIODE IN D3PAK12 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultrafast rectifier and uses an adva
Datasheet: MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , FGPF4633 , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2