MGV12N120D Specs and Replacement
Type Designator: MGV12N120D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 123 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 114 nS
Coesⓘ - Output Capacitance, typ: 126 pF
Package: TO268AA
MGV12N120D Substitution - IGBT ⓘ Cross-Reference Search
MGV12N120D datasheet
mgv12n120d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra fast rectifier and uses an adva... See More ⇒
mgv12n120drev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra fast rectifier and uses an adva... See More ⇒
Specs: MGP20N60U, MGP21N60E, MGP4N60E, MGP4N60ED, MGP7N60E, MGP7N60ED, MGS05N60D, MGS13002D, IRG7R313U, MGW12N120, MGW12N120D, MGW14N60ED, MGW20N120, MGW20N60D, MGW21N60ED, MGW30N60, MGY20N120D
Keywords - MGV12N120D transistor spec
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History: AOK40B65M3
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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