MGW12N120 Todos los transistores

 

MGW12N120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MGW12N120

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 123 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.51 V @25℃

trⓘ - Tiempo de subida, typ: 83 nS

Coesⓘ - Capacitancia de salida, typ: 126 pF

Encapsulados: TO247

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MGW12N120 datasheet

 ..1. Size:228K  motorola
 mgw12n120.pdf pdf_icon

MGW12N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120/D Designer's Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 247 termination scheme to provide an enhanced and reliable high 12 A @ 90 C voltage blocking

 0.1. Size:213K  motorola
 mgw12n120d.pdf pdf_icon

MGW12N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120D/D Designer's Data Sheet MGW12N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 247 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra f

Otros transistores... MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , GT30G124 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 .

History: MGW20N120 | SGT20T135QR1P7 | SGT20T60SD1S | SGT75T65SDM1P4 | MGP4N60ED | MGW14N60ED

 

 

 

 

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