MGW12N120 PDF and Equivalents Search

 

MGW12N120 Specs and Replacement

Type Designator: MGW12N120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 123 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.51 V @25℃

tr ⓘ - Rise Time, typ: 83 nS

Coesⓘ - Output Capacitance, typ: 126 pF

Package: TO247

 MGW12N120 Substitution

- IGBTⓘ Cross-Reference Search

 

MGW12N120 datasheet

 ..1. Size:228K  motorola
 mgw12n120.pdf pdf_icon

MGW12N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120/D Designer's Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 247 termination scheme to provide an enhanced and reliable high 12 A @ 90 C voltage blocking ... See More ⇒

 0.1. Size:213K  motorola
 mgw12n120d.pdf pdf_icon

MGW12N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120D/D Designer's Data Sheet MGW12N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 247 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra f... See More ⇒

Specs: MGP21N60E, MGP4N60E, MGP4N60ED, MGP7N60E, MGP7N60ED, MGS05N60D, MGS13002D, MGV12N120D, GT30G124, MGW12N120D, MGW14N60ED, MGW20N120, MGW20N60D, MGW21N60ED, MGW30N60, MGY20N120D, MGY25N120

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