All IGBT. MGW12N120 Datasheet

 

MGW12N120 Datasheet and Replacement


   Type Designator: MGW12N120
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 123 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.51 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 83 nS
   Coesⓘ - Output Capacitance, typ: 126 pF
   Qgⓘ - Total Gate Charge, typ: 31 nC
   Package: TO247
      - IGBT Cross-Reference

 

MGW12N120 Datasheet (PDF)

 ..1. Size:228K  motorola
 mgw12n120.pdf pdf_icon

MGW12N120

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW12N120/DDesigner's Data SheetMGW12N120Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO247termination scheme to provide an enhanced and reliable high12 A @ 90Cvoltageblocking

 0.1. Size:213K  motorola
 mgw12n120d.pdf pdf_icon

MGW12N120

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW12N120D/DDesigner's Data SheetMGW12N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO24712 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultraf

Datasheet: MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , YGW60N65F1A1 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 .

History: IXGT24N60C | RGTH60TS65 | RGTH60TS65D | IXGJ50N60C4D1 | MGP4N60ED | SGL50N60RUFD | SGP6N60UF

Keywords - MGW12N120 transistor datasheet

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