MGW12N120 Datasheet and Replacement
Type Designator: MGW12N120
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 123 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.51 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 83 nS
Coesⓘ - Output Capacitance, typ: 126 pF
Qg ⓘ - Total Gate Charge, typ: 31 nC
Package: TO247
MGW12N120 substitution
MGW12N120 Datasheet (PDF)
mgw12n120.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW12N120/DDesigner's Data SheetMGW12N120Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO247termination scheme to provide an enhanced and reliable high12 A @ 90Cvoltageblocking
mgw12n120d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW12N120D/DDesigner's Data SheetMGW12N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO24712 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultraf
Datasheet: MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , IRG7R313U , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 .
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