MGW20N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGW20N120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 174 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 28 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 103 nS
Coesⓘ - Capacitancia de salida, typ: 122 pF
Qgⓘ - Carga total de la puerta, typ: 62 nC
Paquete / Cubierta: TO247
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MGW20N120 Datasheet (PDF)
mgw20n120.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW20N120/DDesigner's Data SheetMGW20N120Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO247termination scheme to provide an enhanced and reliable high20 A @ 90Cvoltageblocking
mgw20n60d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW20N60D/DDesigner's Data SheetMGW20N60DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO24720 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged32 A @ 25Cwith a soft recovery ultrafas
mgw20n60.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW20N60D/DDesigner's Data SheetMGW20N60DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO24720 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged32 A @ 25Cwith a soft recovery ultrafas
Otros transistores... MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , IHW20N135R5 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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