MGW20N120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGW20N120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 174 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 28 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
trⓘ - Tiempo de subida, typ: 103 nS
Coesⓘ - Capacitancia de salida, typ: 122 pF
Encapsulados: TO247
Búsqueda de reemplazo de MGW20N120 IGBT
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MGW20N120 datasheet
mgw20n120.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW20N120/D Designer's Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 247 termination scheme to provide an enhanced and reliable high 20 A @ 90 C voltage blocking
mgw20n60d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW20N60D/D Designer's Data Sheet MGW20N60D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 247 20 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 32 A @ 25 C with a soft recovery ultra fas
mgw20n60.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW20N60D/D Designer's Data Sheet MGW20N60D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 247 20 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 32 A @ 25 C with a soft recovery ultra fas
Otros transistores... MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , IHW20N135R5 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 .
History: MGW14N60ED | SGT20T60SD1S | SGT20T135QR1P7 | SGT75T65SDM1P4 | MGP4N60ED
History: MGW14N60ED | SGT20T60SD1S | SGT20T135QR1P7 | SGT75T65SDM1P4 | MGP4N60ED
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Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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