MGW20N120 PDF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

MGW20N120 PDF Specs and Replacement

   Type Designator: MGW20N120
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 174 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 28 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   tr ⓘ - Rise Time, typ: 103 nS
   Coesⓘ - Output Capacitance, typ: 122 pF
   Package: TO247

MGW20N120 Substitution

- IGBT ⓘ Cross-Reference Search

MGW20N120 PDF specs

..1. Size:231K motorola
mgw20n120.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW20N120/D Designer's Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 247 termination scheme to provide an enhanced and reliable high 20 A @ 90 C voltage blocking ... See More ⇒

8.1. Size:209K motorola
mgw20n60d.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW20N60D/D Designer's Data Sheet MGW20N60D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 247 20 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 32 A @ 25 C with a soft recovery ultra fas... See More ⇒

8.2. Size:246K motorola
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