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MGW21N60ED - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MGW21N60ED
   Tipo de transistor: IGBT + Diode + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 142 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 31 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 146 pF
   Qgⓘ - Carga total de la puerta, typ: 86 nC
   Paquete / Cubierta: TO247
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MGW21N60ED Datasheet (PDF)

 ..1. Size:157K  motorola
 mgw21n60ed.pdf pdf_icon

MGW21N60ED

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DDesigner's Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanc

 0.1. Size:152K  motorola
 mgw21n60edrev0.pdf pdf_icon

MGW21N60ED

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DPreliminary Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanced

Otros transistores... MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , SGT50T65FD1PN , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 .

History: IXGK72N60B3H1 | IXGH90N60B3 | AIKQ100N60CT | MGP20N40CL | IXGX35N120CD1 | AIGW50N65H5 | IXGN82N120B3H1

 

 
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