All IGBT. MGW21N60ED Datasheet

 

MGW21N60ED Datasheet and Replacement


   Type Designator: MGW21N60ED
   Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 142 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 31 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 146 pF
   Qgⓘ - Total Gate Charge, typ: 86 nC
   Package: TO247
      - IGBT Cross-Reference

 

MGW21N60ED Datasheet (PDF)

 ..1. Size:157K  motorola
 mgw21n60ed.pdf pdf_icon

MGW21N60ED

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DDesigner's Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanc

 0.1. Size:152K  motorola
 mgw21n60edrev0.pdf pdf_icon

MGW21N60ED

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DPreliminary Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanced

Datasheet: MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , SGT50T65FD1PN , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 .

History: SKP15N60 | MWI35-12T7T

Keywords - MGW21N60ED transistor datasheet

 MGW21N60ED cross reference
 MGW21N60ED equivalent finder
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