MGW21N60ED IGBT. Datasheet pdf. Equivalent
Type Designator: MGW21N60ED
Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 142 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 31 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 146 pF
Qgⓘ - Total Gate Charge, typ: 86 nC
Package: TO247
MGW21N60ED Transistor Equivalent Substitute - IGBT Cross-Reference Search
MGW21N60ED Datasheet (PDF)
mgw21n60ed.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DDesigner's Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanc
mgw21n60edrev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DPreliminary Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanced
Datasheet: MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , SGT40N60FD2PN , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2