MGW21N60ED IGBT. Datasheet pdf. Equivalent

Type Designator: MGW21N60ED

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 142W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 21A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 29

Maximum Collector Capacity (Cc), pF: 1605pF

Package: TO247

MGW21N60ED Transistor Equivalent Substitute - IGBT Cross-Reference Search

MGW21N60ED Datasheet (PDF)

1.1. mgw21n60ed.pdf Size:157K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW21N60ED/D Designer's? Data Sheet MGW21N60ED Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged IGBT IN TO–247 with a soft recovery ultra–fast rectifier and uses an advanced 21 A @ 90°C termination scheme to provide an enhanced and reliable

1.2. mgw21n60edrev0.pdf Size:152K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW21N60ED/D Preliminary Data Sheet MGW21N60ED Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged IGBT IN TO–247 with a soft recovery ultra–fast rectifier and uses an advanced 21 A @ 90°C termination scheme to provide an enhanced and reliable

Datasheet: MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , HGTG30N60A4D , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 .

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IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |