MGW21N60ED PDF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

MGW21N60ED PDF Specs and Replacement

   Type Designator: MGW21N60ED
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 142 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 31 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   tr ⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 146 pF
   Package: TO247

MGW21N60ED Substitution

- IGBT ⓘ Cross-Reference Search

MGW21N60ED PDF specs

..1. Size:157K motorola
mgw21n60ed.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW21N60ED/D Designer's Data Sheet MGW21N60ED Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged IGBT IN TO 247 with a soft recovery ultra fast rectifier and uses an advanced 21 A @ 90 C termination scheme to provide an enhanc... See More ⇒

0.1. Size:152K motorola
mgw21n60edrev0.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW21N60ED/D Preliminary Data Sheet MGW21N60ED Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged IGBT IN TO 247 with a soft recovery ultra fast rectifier and uses an advanced 21 A @ 90 C termination scheme to provide an enhanced... See More ⇒

Specs: MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , IKW50N60T , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 .