MGW30N60 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGW30N60
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 202 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 275 pF
Encapsulados: TO247
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MGW30N60 datasheet
mgw30n60.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW30N60/D Designer's Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 247 termination scheme to provide an enhanced and reliable high 30 A @ 90 C voltage blocking ca
mgw30n60rev0dx.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW30N60/D Designer's Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 247 termination scheme to provide an enhanced and reliable high 30 A @ 90 C voltage blocking ca
Otros transistores... MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , YGW60N65F1A1 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 .
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