MGW30N60 Specs and Replacement
Type Designator: MGW30N60
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 202 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 275 pF
Package: TO247
MGW30N60 Substitution - IGBT ⓘ Cross-Reference Search
MGW30N60 datasheet
mgw30n60.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW30N60/D Designer's Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 247 termination scheme to provide an enhanced and reliable high 30 A @ 90 C voltage blocking ca... See More ⇒
mgw30n60rev0dx.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW30N60/D Designer's Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 247 termination scheme to provide an enhanced and reliable high 30 A @ 90 C voltage blocking ca... See More ⇒
Specs: MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , YGW60N65F1A1 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 .
Keywords - MGW30N60 transistor spec
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