MGW30N60 Datasheet and Replacement
Type Designator: MGW30N60
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 202 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 275 pF
Qgⓘ - Total Gate Charge, typ: 150 nC
Package: TO247
- IGBT Cross-Reference
MGW30N60 Datasheet (PDF)
mgw30n60.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW30N60/DDesigner's Data SheetMGW30N60Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO247termination scheme to provide an enhanced and reliable high30 A @ 90Cvoltageblocking ca
mgw30n60rev0dx.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW30N60/DDesigner's Data SheetMGW30N60Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO247termination scheme to provide an enhanced and reliable high30 A @ 90Cvoltageblocking ca
Datasheet: MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , RJH3047 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 .
History: SIG30N60P | MKI50-06A7
Keywords - MGW30N60 transistor datasheet
MGW30N60 cross reference
MGW30N60 equivalent finder
MGW30N60 lookup
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History: SIG30N60P | MKI50-06A7
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