All IGBT. MGW30N60 Datasheet

 

MGW30N60 Datasheet and Replacement


   Type Designator: MGW30N60
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 202 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 275 pF
   Qg ⓘ - Total Gate Charge, typ: 150 nC
   Package: TO247
 

 MGW30N60 substitution

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MGW30N60 Datasheet (PDF)

 ..1. Size:184K  motorola
mgw30n60.pdf pdf_icon

MGW30N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW30N60/DDesigner's Data SheetMGW30N60Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO247termination scheme to provide an enhanced and reliable high30 A @ 90Cvoltageblocking ca

 0.1. Size:214K  motorola
mgw30n60rev0dx.pdf pdf_icon

MGW30N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW30N60/DDesigner's Data SheetMGW30N60Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO247termination scheme to provide an enhanced and reliable high30 A @ 90Cvoltageblocking ca

Datasheet: MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , IHW20N135R5 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 .

History: NGTB40N65IHL2WG

Keywords - MGW30N60 transistor datasheet

 MGW30N60 cross reference
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