MGY20N120D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGY20N120D
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 174 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 28 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.42 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 103 nS
Coesⓘ - Capacitancia de salida, typ: 208 pF
Paquete / Cubierta: TO264
MGY20N120D Datasheet (PDF)
mgy20n120d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY20N120D/DDesigner's Data SheetMGY20N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO26420 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged28 A @ 25Cwith a soft recovery ultraf
mgy20n120drev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY20N120D/DDesigner's Data SheetMGY20N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO26420 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged28 A @ 25Cwith a soft recovery ultraf
Otros transistores... MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , GT30F131 , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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