MGY20N120D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGY20N120D
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 174 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 28 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.42 V @25℃
trⓘ - Tiempo de subida, typ: 103 nS
Coesⓘ - Capacitancia de salida, typ: 208 pF
Encapsulados: TO264
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MGY20N120D datasheet
mgy20n120d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY20N120D/D Designer's Data Sheet MGY20N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 20 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 28 A @ 25 C with a soft recovery ultra f
mgy20n120drev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY20N120D/D Designer's Data Sheet MGY20N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 20 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 28 A @ 25 C with a soft recovery ultra f
Otros transistores... MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , CRG60T60AK3HD , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 .
History: MGY25N120
History: MGY25N120
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