All IGBT. MGY20N120D Datasheet

 

MGY20N120D Datasheet and Replacement


   Type Designator: MGY20N120D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 174 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 28 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.42 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 103 nS
   Coesⓘ - Output Capacitance, typ: 208 pF
   Package: TO264
      - IGBT Cross-Reference

 

MGY20N120D Datasheet (PDF)

 ..1. Size:176K  motorola
 mgy20n120d.pdf pdf_icon

MGY20N120D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY20N120D/DDesigner's Data SheetMGY20N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO26420 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged28 A @ 25Cwith a soft recovery ultraf

 0.1. Size:254K  motorola
 mgy20n120drev0.pdf pdf_icon

MGY20N120D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY20N120D/DDesigner's Data SheetMGY20N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO26420 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged28 A @ 25Cwith a soft recovery ultraf

Datasheet: MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , SGT60N60FD1P7 , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 .

History: HGTG20N120CN | IXGK28N140B3H1 | MGW20N120 | MWI30-12E6K | AIGW50N65H5 | IXSP10N60B2D1 | SGH10N120RUFD

Keywords - MGY20N120D transistor datasheet

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 MGY20N120D equivalent finder
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