MGY20N120D Datasheet. Specs and Replacement

Type Designator: MGY20N120D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 174 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 28 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.42 V @25℃

tr ⓘ - Rise Time, typ: 103 nS

Coesⓘ - Output Capacitance, typ: 208 pF

Package: TO264

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MGY20N120D datasheet

 ..1. Size:176K  motorola
 mgy20n120d.pdf pdf_icon

MGY20N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY20N120D/D Designer's Data Sheet MGY20N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 20 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 28 A @ 25 C with a soft recovery ultra f... See More ⇒

 0.1. Size:254K  motorola
 mgy20n120drev0.pdf pdf_icon

MGY20N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY20N120D/D Designer's Data Sheet MGY20N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 20 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 28 A @ 25 C with a soft recovery ultra f... See More ⇒

Specs: MGV12N120D, MGW12N120, MGW12N120D, MGW14N60ED, MGW20N120, MGW20N60D, MGW21N60ED, MGW30N60, GT30G124, MGY25N120, MGY25N120D, MID100-12A3, MID145-12A3, MID150-12A4, MID200-12A4, MID300-12A4, MID550-12A4

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