MGY20N120D IGBT. Datasheet pdf. Equivalent
Type Designator: MGY20N120D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 174 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 28 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.42 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 103 nS
Coesⓘ - Output Capacitance, typ: 208 pF
Qgⓘ - Total Gate Charge, typ: 63 nC
Package: TO264
MGY20N120D Transistor Equivalent Substitute - IGBT Cross-Reference Search
MGY20N120D Datasheet (PDF)
mgy20n120d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY20N120D/DDesigner's Data SheetMGY20N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO26420 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged28 A @ 25Cwith a soft recovery ultraf
mgy20n120drev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY20N120D/DDesigner's Data SheetMGY20N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO26420 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged28 A @ 25Cwith a soft recovery ultraf
Datasheet: MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , GT30F131 , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2