MGY25N120D Todos los transistores

 

MGY25N120D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MGY25N120D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 212 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 38 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.37 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 124 nS
   Coesⓘ - Capacitancia de salida, typ: 198 pF
   Paquete / Cubierta: TO264
 

 Búsqueda de reemplazo de MGY25N120D IGBT

   - Selección ⓘ de transistores por parámetros

 

MGY25N120D PDF specs

 ..1. Size:218K  motorola
 mgy25n120d.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 25 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 38 A @ 25 C with a soft recovery ultra f... See More ⇒

 5.1. Size:195K  motorola
 mgy25n120.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 264 termination scheme to provide an enhanced and reliable high 25 A @ 90 C voltage blocking ... See More ⇒

 6.1. Size:256K  motorola
 mgy25n12d.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 25 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 38 A @ 25 C with a soft recovery ultra f... See More ⇒

 6.2. Size:228K  motorola
 mgy25n12.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 264 termination scheme to provide an enhanced and reliable high 25 A @ 90 C voltage blocking ... See More ⇒

SHOW MORE

Otros transistores... MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , NGD8201N , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D .

 

 
Back to Top

 


 
.