MGY25N120D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MGY25N120D  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 212 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 38 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.37 V @25℃

trⓘ - Tiempo de subida, typ: 124 nS

Coesⓘ - Capacitancia de salida, typ: 198 pF

Encapsulados: TO264

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MGY25N120D datasheet

 ..1. Size:218K  motorola
 mgy25n120d.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 25 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 38 A @ 25 C with a soft recovery ultra f

 5.1. Size:195K  motorola
 mgy25n120.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 264 termination scheme to provide an enhanced and reliable high 25 A @ 90 C voltage blocking

 6.1. Size:256K  motorola
 mgy25n12d.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 25 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 38 A @ 25 C with a soft recovery ultra f

 6.2. Size:228K  motorola
 mgy25n12.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 264 termination scheme to provide an enhanced and reliable high 25 A @ 90 C voltage blocking

MOSTRAR MÁS

Otros transistores... MGW12N120D, MGW14N60ED, MGW20N120, MGW20N60D, MGW21N60ED, MGW30N60, MGY20N120D, MGY25N120, YGW60N65F1A2, MID100-12A3, MID145-12A3, MID150-12A4, MID200-12A4, MID300-12A4, MID550-12A4, MID75-12A3, MMG05N60D