MGY25N120D datasheet, аналоги, основные параметры

Наименование: MGY25N120D  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 212 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 38 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.37 V @25℃

tr ⓘ - Время нарастания типовое: 124 nS

Coesⓘ - Выходная емкость, типовая: 198 pF

Тип корпуса: TO264

  📄📄 Копировать 

 Аналог (замена) для MGY25N120D

- подбор ⓘ IGBT транзистора по параметрам

 

MGY25N120D даташит

 ..1. Size:218K  motorola
 mgy25n120d.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 25 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 38 A @ 25 C with a soft recovery ultra f

 5.1. Size:195K  motorola
 mgy25n120.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 264 termination scheme to provide an enhanced and reliable high 25 A @ 90 C voltage blocking

 6.1. Size:256K  motorola
 mgy25n12d.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 25 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 38 A @ 25 C with a soft recovery ultra f

 6.2. Size:228K  motorola
 mgy25n12.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 264 termination scheme to provide an enhanced and reliable high 25 A @ 90 C voltage blocking

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... MGW12N120D, MGW14N60ED, MGW20N120, MGW20N60D, MGW21N60ED, MGW30N60, MGY20N120D, MGY25N120, YGW60N65F1A2, MID100-12A3, MID145-12A3, MID150-12A4, MID200-12A4, MID300-12A4, MID550-12A4, MID75-12A3, MMG05N60D