MGY25N120D - аналоги и описание IGBT

 

MGY25N120D - Аналоги. Основные параметры


   Наименование: MGY25N120D
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 212 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 38 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.37 V @25℃
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 124 nS
   Coesⓘ - Выходная емкость, типовая: 198 pF
   Тип корпуса: TO264
 

 Аналог (замена) для MGY25N120D

   - подбор ⓘ IGBT транзистора по параметрам

 

Технические параметры MGY25N120D

 ..1. Size:218K  motorola
 mgy25n120d.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 25 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 38 A @ 25 C with a soft recovery ultra f

 5.1. Size:195K  motorola
 mgy25n120.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 264 termination scheme to provide an enhanced and reliable high 25 A @ 90 C voltage blocking

 6.1. Size:256K  motorola
 mgy25n12d.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 25 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 38 A @ 25 C with a soft recovery ultra f

 6.2. Size:228K  motorola
 mgy25n12.pdf pdf_icon

MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 264 termination scheme to provide an enhanced and reliable high 25 A @ 90 C voltage blocking

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , NGD8201N , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D .

 

 
Back to Top

 


 
.