MGY25N120D IGBT. Datasheet pdf. Equivalent

   Type Designator: MGY25N120D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 212 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 38 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.37 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 124 nS
   Coesⓘ - Output Capacitance, typ: 198 pF
   Qgⓘ - Total Gate Charge, typ: 62 nC
   Package: TO264

MGY25N120D Transistor Equivalent Substitute - IGBT Cross-Reference Search

MGY25N120D Datasheet (PDF)

..1. Size:218K motorola
mgy25n120d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY25N120D/DDesigner's Data SheetMGY25N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO26425 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged38 A @ 25Cwith a soft recovery ultraf

5.1. Size:195K motorola
mgy25n120.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY25N120/DDesigner's Data SheetMGY25N120Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO264termination scheme to provide an enhanced and reliable high25 A @ 90Cvoltageblocking

6.1. Size:256K motorola
mgy25n12d.pdf