All IGBT. MGY25N120D Datasheet

 

MGY25N120D IGBT. Datasheet pdf. Equivalent

Type Designator: MGY25N120D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 212W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.24V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 25A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 91

Maximum Collector Capacity (Cc), pF: 1859pF

Package: TO264

MGY25N120D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MGY25N120D Datasheet (PDF)

1.1. mgy25n120d.pdf Size:218K _motorola

MGY25N120D
MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's? Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 25 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 38 A @ 25°C with a soft recovery ultra–fast rectifier and

1.2. mgy25n120.pdf Size:195K _motorola

MGY25N120D
MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's? Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–264 termination scheme to provide an enhanced and reliable high 25 A @ 90°C voltage–blocking capability. Sh

2.1. mgy25n12d.pdf Size:256K _motorola

MGY25N120D
MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's? Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 25 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 38 A @ 25°C with a soft recovery ultra–fast rectifier and

2.2. mgy25n12.pdf Size:228K _motorola

MGY25N120D
MGY25N120D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's? Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–264 termination scheme to provide an enhanced and reliable high 25 A @ 90°C voltage–blocking capability. Sh

Datasheet: MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , FGH60N60SFD , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |