MGY25N120D Datasheet and Replacement
Type Designator: MGY25N120D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 212 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 38 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.37 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 124 nS
Coesⓘ - Output Capacitance, typ: 198 pF
Package: TO264
MGY25N120D substitution
MGY25N120D Datasheet (PDF)
mgy25n120d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY25N120D/DDesigner's Data SheetMGY25N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO26425 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged38 A @ 25Cwith a soft recovery ultraf
mgy25n120.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY25N120/DDesigner's Data SheetMGY25N120Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO264termination scheme to provide an enhanced and reliable high25 A @ 90Cvoltageblocking
mgy25n12d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY25N120D/DDesigner's Data SheetMGY25N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO26425 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged38 A @ 25Cwith a soft recovery ultraf
mgy25n12.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY25N120/DDesigner's Data SheetMGY25N120Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO264termination scheme to provide an enhanced and reliable high25 A @ 90Cvoltageblocking
Datasheet: MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , NGD8201N , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D .
History: IXYA20N65C3D1
Keywords - MGY25N120D transistor datasheet
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History: IXYA20N65C3D1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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