MSAGX60F60A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSAGX60F60A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.9 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 2500pF pF
Paquete / Cubierta: SMD-P
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MSAGX60F60A Datasheet (PDF)
msagx60f60a.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGX60F60AFAX: (714) 966-5256MSAHX60F60AFeatures600 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof60 Amps Hermetically sealed, surface mount power package Low package inductance2.9 Volts vce(sat) Very low thermal resistance Reverse polarity availa
msagx75f60a.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAGX75F60AFeatures600 Volts Rugged polysilicon gate cell structure75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package2.7 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon requ
msagx75l60a.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAGX75L60AFeatures600 Volts Rugged polysilicon gate cell structure75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package1.8 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon requ
Otros transistores... MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D , IKW50N60H3 , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A .
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