MSAGX60F60A PDF Specs and Replacement
Type Designator: MSAGX60F60A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 2500pF pF
Package: SMD-P
MSAGX60F60A Substitution
MSAGX60F60A PDF specs
msagx60f60a.pdf
2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAGX60F60A FAX (714) 966-5256 MSAHX60F60A Features 600 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof 60 Amps Hermetically sealed, surface mount power package Low package inductance 2.9 Volts vce(sat) Very low thermal resistance Reverse polarity availa... See More ⇒
msagx75f60a.pdf
2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAGX75F60A Features 600 Volts Rugged polysilicon gate cell structure 75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package 2.7 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon requ... See More ⇒
msagx75l60a.pdf
2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAGX75L60A Features 600 Volts Rugged polysilicon gate cell structure 75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package 1.8 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon requ... See More ⇒
Specs: MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D , IKW50N60H3 , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A .
Keywords - MSAGX60F60A transistor spec
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