P12N60C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HGTP12N60C3, HGT1S12N60C3SData Sheet December 200124A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns a

HGTP12N60C3D, HGT1S12N60C3DSData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oCThis family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HGTP12N60C3, HGT1S12N60C3,S E M I C O N D U C T O R HGT1S12N60C3SAugust 1995 24A, 600V, UFS Series N-Channel IGBTFeatures Packages JEDEC TO-220ABEMITTER 24A, 600V at TC = +25oCCOLLECTORGATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oCCOLLECTOR(FLANGE) Short Circuit Rating Low Conduction LossJEDEC TO-262AADescriptionEMITTER