P12N60C3 Datasheet. Specs and Replacement

Type Designator: P12N60C3  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 104 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 24 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 14 nS

Package: TO220AB

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P12N60C3 datasheet

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Specs: MSAHZ52F120A, MSAHZ52F120B, NTE3311, NTE3312, NTE3320, NTE3321, NTE3322, NTE3323, IHW40T60, PPNGZ52F120A, PPNGZ52F120B, PPNHZ52F120A, PPNHZ52F120B, RCH10N35, RCH10N40, RCH10N40A, RCM10N35

Keywords - P12N60C3 transistor spec

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