SGH20N120RUF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGH20N120RUF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 230 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 32 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Coesⓘ - Capacitancia de salida, typ: 170 pF

Encapsulados: TO3P

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SGH20N120RUF datasheet

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 sgh20n120ruf.pdf pdf_icon

SGH20N120RUF

IGBT SGH20N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) RUF series provides low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUF series Low saturation voltage VCE(sat) = 2.3 V @ IC = 20A is

 0.1. Size:596K  fairchild semi
 sgh20n120rufd.pdf pdf_icon

SGH20N120RUF

September 2000 IGBT SGH20N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10 s @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.3 V

 8.1. Size:632K  fairchild semi
 sgh20n60rufd.pdf pdf_icon

SGH20N120RUF

September 2000 IGBT SGH20N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.2 V @

 8.2. Size:270K  samsung
 sgh20n60rufd.pdf pdf_icon

SGH20N120RUF

CO-PAK IGBT SGH20N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=20A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

MOSTRAR MÁS

Otros transistores... SGF80N60UFD, SGH10N120RUF, SGH10N120RUFD, SGH10N60RUFD, SGH13N60UFD, SGH15N120RUF, SGH15N120RUFD, SGH15N60RUFD, FGH40N60UFD, SGH20N120RUFD, SGH20N60RUFD, SGH23N60UFD, SGH25N120RUF, SGH30N60RUF, SGH30N60RUFD, SGH40N60UF, SGH40N60UFD