SGH20N120RUF PDF and Equivalents Search

 

SGH20N120RUF Specs and Replacement

Type Designator: SGH20N120RUF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 230 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 32 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 170 pF

Package: TO3P

 SGH20N120RUF Substitution

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SGH20N120RUF datasheet

 ..1. Size:536K  1
sgh20n120ruf.pdf pdf_icon

SGH20N120RUF

IGBT SGH20N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) RUF series provides low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUF series Low saturation voltage VCE(sat) = 2.3 V @ IC = 20A is... See More ⇒

 0.1. Size:596K  fairchild semi
sgh20n120rufd.pdf pdf_icon

SGH20N120RUF

September 2000 IGBT SGH20N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10 s @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.3 V ... See More ⇒

 8.1. Size:632K  fairchild semi
sgh20n60rufd.pdf pdf_icon

SGH20N120RUF

September 2000 IGBT SGH20N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.2 V @ ... See More ⇒

 8.2. Size:270K  samsung
sgh20n60rufd.pdf pdf_icon

SGH20N120RUF

CO-PAK IGBT SGH20N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=20A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS ... See More ⇒

Specs: SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , SGH15N60RUFD , FGH40N60UFD , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD .

History: SGL10N60RUFD

Keywords - SGH20N120RUF transistor spec

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