SGH20N120RUF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: SGH20N120RUF
Тип транзистора: IGBT
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 230
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 25
Максимальный постоянный ток коллектора |Ic| @25℃, A: 32
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.3
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 7.5
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 60
Емкость коллектора типовая (Cc), pf: 170
Общий заряд затвора (Qg), typ, nC: 95
Тип корпуса: TO3P
Аналог (замена) для SGH20N120RUF
SGH20N120RUF Datasheet (PDF)
sgh20n120ruf.pdf
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IGBTSGH20N120RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10s @ TC = 100C, VGE = 15V(IGBTs) RUF series provides low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUF series Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20Ais
sgh20n120rufd.pdf
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September 2000 IGBTSGH20N120RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10s @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.3 V
sgh20n60rufd.pdf
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September 2000 IGBTSGH20N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.2 V @
sgh20n60rufd.pdf
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CO-PAK IGBT SGH20N60RUFDFEATURESTO-3P* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 50nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATINGS
Другие IGBT... SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , SGH15N60RUFD , GT30J124 , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD .
![SGH20N120RUF](https://alltransistors.com/images/us.png)
![SGH20N120RUF](https://alltransistors.com/images/es.png)
![SGH20N120RUF](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
IGBT: MPGW40N65E | MPGC50N65E | MPBW75N65E | MPBW50N65ES | MPBW50N65EH | MPBW50N65ED | MPBW50N65E | MPBW40N65E | MPBW40N65BU | MPBW40N120ES | MPBW40N120EH