Справочник IGBT. SGH20N120RUF

 

SGH20N120RUF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SGH20N120RUF
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 230
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 25
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 32
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.3
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 7.5
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 60
   Емкость коллектора типовая (Cc), pf: 170
   Общий заряд затвора (Qg), typ, nC: 95
   Тип корпуса: TO3P

 Аналог (замена) для SGH20N120RUF

 

 

SGH20N120RUF Datasheet (PDF)

 ..1. Size:536K  1
 sgh20n120ruf.pdf

SGH20N120RUF SGH20N120RUF

IGBTSGH20N120RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10s @ TC = 100C, VGE = 15V(IGBTs) RUF series provides low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUF series Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20Ais

 0.1. Size:596K  fairchild semi
 sgh20n120rufd.pdf

SGH20N120RUF SGH20N120RUF

September 2000 IGBTSGH20N120RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10s @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.3 V

 8.1. Size:632K  fairchild semi
 sgh20n60rufd.pdf

SGH20N120RUF SGH20N120RUF

September 2000 IGBTSGH20N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.2 V @

 8.2. Size:270K  samsung
 sgh20n60rufd.pdf

SGH20N120RUF SGH20N120RUF

CO-PAK IGBT SGH20N60RUFDFEATURESTO-3P* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 50nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATINGS

Другие IGBT... SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , SGH15N60RUFD , GT30J124 , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD .

 

 
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