SGH30N60RUFD Todos los transistores

 

SGH30N60RUFD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGH30N60RUFD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 235 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 48 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 65 nS
   Coesⓘ - Capacitancia de salida, typ: 310 pF
   Paquete / Cubierta: TO3P
 

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SGH30N60RUFD datasheet

 ..1. Size:658K  fairchild semi
 sgh30n60rufd.pdf pdf_icon

SGH30N60RUFD

September 2000 IGBT SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.2 V @

 ..2. Size:284K  samsung
 sgh30n60rufd.pdf pdf_icon

SGH30N60RUFD

CO-PAK IGBT SGH30N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=30A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

 3.1. Size:196K  1
 sgh30n60ruf.pdf pdf_icon

SGH30N60RUFD

Otros transistores... SGH15N120RUFD , SGH15N60RUFD , SGH20N120RUF , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , FGD4536 , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF , SGH80N60UFD , SGI25N40 , SGL10N60RUFD .

 

 

 


 
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