SGH30N60RUFD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SGH30N60RUFD Specs and Replacement

Type Designator: SGH30N60RUFD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 235 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 48 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 65 nS

Coesⓘ - Output Capacitance, typ: 310 pF

Package: TO3P

SGH30N60RUFD Substitution

- IGBT ⓘ Cross-Reference Search

SGH30N60RUFD datasheet

..1. Size:658K fairchild semi
sgh30n60rufd.pdf pdf_icon

September 2000 IGBT SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.2 V @ ... See More ⇒

..2. Size:284K samsung
sgh30n60rufd.pdf pdf_icon

CO-PAK IGBT SGH30N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=30A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS ... See More ⇒

3.1. Size:196K 1
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