IGC109T120T6RH IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IGC109T120T6RH datasheet

..1. Size:74K infineon
igc109t120t6rh.pdf pdf_icon

IGC109T120T6RH IGBT4 High Power Chip Features 1200V Trench + Field stop technology This chip is used for C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 saw

1.1. Size:72K infineon
igc109t120t6rl.pdf pdf_icon

IGC109T120T6RL IGBT4 Low Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2 sawn on foil MECHA

1.2. Size:71K infineon
igc109t120t6rm.pdf pdf_icon

IGC109T120T6RM IGBT4 Medium Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses medium power modules soft turn off positive temperature coefficient Applications easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RM 1200V 110A 7.48 x 14.61 mm2 sawn on f

4.1. Size:235K infineon
sigc109t120r3le.pdf pdf_icon

SIGC109T120R3LE IGBT3 Power Chip Features This chip is used for 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Param