All IGBT. IGC109T120T6RH Datasheet

 

IGC109T120T6RH IGBT. Datasheet pdf. Equivalent


   Type Designator: IGC109T120T6RH
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 110 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 440 pF
   Package: CHIP

 IGC109T120T6RH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IGC109T120T6RH Datasheet (PDF)

 ..1. Size:74K  infineon
igc109t120t6rh.pdf

IGC109T120T6RH IGC109T120T6RH

IGC109T120T6RH IGBT4 High Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications: easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 saw

 1.1. Size:72K  infineon
igc109t120t6rl.pdf

IGC109T120T6RH IGC109T120T6RH

IGC109T120T6RL IGBT4 Low Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2 sawn on foil MECHA

 1.2. Size:71K  infineon
igc109t120t6rm.pdf

IGC109T120T6RH IGC109T120T6RH

IGC109T120T6RM IGBT4 Medium Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses medium power modules soft turn off positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RM 1200V 110A 7.48 x 14.61 mm2 sawn on f

 4.1. Size:235K  infineon
sigc109t120r3le.pdf

IGC109T120T6RH IGC109T120T6RH

SIGC109T120R3LE IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Param

 4.2. Size:127K  infineon
sigc109t120r3l.pdf

IGC109T120T6RH IGC109T120T6RH

SIGC109T120R3LE IGBT3 Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Parameters R

 4.3. Size:236K  infineon
sigc109t120r3e.pdf

IGC109T120T6RH IGC109T120T6RH

SIGC109T120R3E IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3E 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Paramet

Datasheet: IGC03R60DE , IGC04R60D , IGC04R60DE , IGC05R60D , IGC05R60DE , IGC06R60D , IGC11T120T8L , IGC100T65T8RM , FGH30S130P , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IGC10T65QE , IGC114T170S8RH , IGC114T170S8RM , IGC11T120T6L .

 

 
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