SGH40N60UFD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGH40N60UFD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 160 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 170 pF

Encapsulados: TO3P

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SGH40N60UFD datasheet

 ..1. Size:624K  fairchild semi
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SGH40N60UFD

IGBT SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UFD series is designed for applications such as motor High input impedance control and general inverters where high spe

 ..2. Size:263K  samsung
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SGH40N60UFD

N-CHANNEL IGBT SGH40N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 42nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteri

 ..3. Size:603K  onsemi
 sgh40n60ufd.pdf pdf_icon

SGH40N60UFD

IGBT SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UFD series is designed for applications such as motor High input impedance control and general inverters where high spe

 4.1. Size:570K  fairchild semi
 sgh40n60uf.pdf pdf_icon

SGH40N60UFD

IGBT SGH40N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed

MOSTRAR MÁS

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