SGH40N60UFD datasheet, аналоги, основные параметры

Наименование: SGH40N60UFD  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 160 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃

tr ⓘ - Время нарастания типовое: 30 nS

Coesⓘ - Выходная емкость, типовая: 170 pF

Тип корпуса: TO3P

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 Аналог (замена) для SGH40N60UFD

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SGH40N60UFD даташит

 ..1. Size:624K  fairchild semi
 sgh40n60ufd.pdf pdf_icon

SGH40N60UFD

IGBT SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UFD series is designed for applications such as motor High input impedance control and general inverters where high spe

 ..2. Size:263K  samsung
 sgh40n60ufd.pdf pdf_icon

SGH40N60UFD

N-CHANNEL IGBT SGH40N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 42nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteri

 ..3. Size:603K  onsemi
 sgh40n60ufd.pdf pdf_icon

SGH40N60UFD

IGBT SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UFD series is designed for applications such as motor High input impedance control and general inverters where high spe

 4.1. Size:570K  fairchild semi
 sgh40n60uf.pdf pdf_icon

SGH40N60UFD

IGBT SGH40N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed

ПОКАЗАТЬ ЕЩЁ

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