SGH40N60UFD - аналоги и описание IGBT

 

Аналоги SGH40N60UFD. Основные параметры


   Наименование: SGH40N60UFD
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 160 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 30 nS
   Coesⓘ - Выходная емкость, типовая: 170 pF
   Тип корпуса: TO3P
 

 Аналог (замена) для SGH40N60UFD

   - подбор ⓘ IGBT транзистора по параметрам

 

SGH40N60UFD даташит

 ..1. Size:624K  fairchild semi
sgh40n60ufd.pdfpdf_icon

SGH40N60UFD

IGBT SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UFD series is designed for applications such as motor High input impedance control and general inverters where high spe

 ..2. Size:263K  samsung
sgh40n60ufd.pdfpdf_icon

SGH40N60UFD

N-CHANNEL IGBT SGH40N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 42nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteri

 ..3. Size:603K  onsemi
sgh40n60ufd.pdfpdf_icon

SGH40N60UFD

IGBT SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UFD series is designed for applications such as motor High input impedance control and general inverters where high spe

 4.1. Size:570K  fairchild semi
sgh40n60uf.pdfpdf_icon

SGH40N60UFD

IGBT SGH40N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed

Другие IGBT... SGH20N120RUF , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , IXGH60N60 , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD .

 

 

 


 
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