All IGBT. SGH40N60UFD Datasheet

 

SGH40N60UFD Datasheet and Replacement


   Type Designator: SGH40N60UFD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 160 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Package: TO3P
      - IGBT Cross-Reference

 

SGH40N60UFD Datasheet (PDF)

 ..1. Size:624K  fairchild semi
sgh40n60ufd.pdf pdf_icon

SGH40N60UFD

IGBTSGH40N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high spe

 ..2. Size:263K  samsung
sgh40n60ufd.pdf pdf_icon

SGH40N60UFD

N-CHANNEL IGBT SGH40N60UFDFEATURESTO-3P* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=20A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 42nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteri

 ..3. Size:603K  onsemi
sgh40n60ufd.pdf pdf_icon

SGH40N60UFD

IGBTSGH40N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high spe

 4.1. Size:570K  fairchild semi
sgh40n60uf.pdf pdf_icon

SGH40N60UFD

IGBTSGH40N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed

Datasheet: SGH20N120RUF , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGT50T65FD1PT , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD .

History: GT20D201 | GT30F123 | 2MBI50N-060 | RJH60F6BDPQ-A0 | FGA15N120FTD | SG50N06D2S | IRG7I319U

Keywords - SGH40N60UFD transistor datasheet

 SGH40N60UFD cross reference
 SGH40N60UFD equivalent finder
 SGH40N60UFD lookup
 SGH40N60UFD substitution
 SGH40N60UFD replacement

 

 
Back to Top

 


 
.