SGH40N60UFD Datasheet. Specs and Replacement

Type Designator: SGH40N60UFD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 160 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 170 pF

Package: TO3P

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SGH40N60UFD datasheet

 ..1. Size:624K  fairchild semi
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SGH40N60UFD

IGBT SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UFD series is designed for applications such as motor High input impedance control and general inverters where high spe... See More ⇒

 ..2. Size:263K  samsung
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SGH40N60UFD

N-CHANNEL IGBT SGH40N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 42nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteri... See More ⇒

 ..3. Size:603K  onsemi
 sgh40n60ufd.pdf pdf_icon

SGH40N60UFD

IGBT SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UFD series is designed for applications such as motor High input impedance control and general inverters where high spe... See More ⇒

 4.1. Size:570K  fairchild semi
 sgh40n60uf.pdf pdf_icon

SGH40N60UFD

IGBT SGH40N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 20A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed ... See More ⇒

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Specs: SGH20N120RUF, SGH20N120RUFD, SGH20N60RUFD, SGH23N60UFD, SGH25N120RUF, SGH30N60RUF, SGH30N60RUFD, SGH40N60UF, FGD4536, SGH5N120RUF, SGH5N120RUFD, SGH80N60UF, SGH80N60UFD, SGI25N40, SGL10N60RUFD, SGL15N60RUFD, SGL160N60UFD

Keywords - SGH40N60UFD transistor spec

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