SGH5N120RUFD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGH5N120RUFD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 74 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 8 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 45 pF
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de SGH5N120RUFD IGBT
SGH5N120RUFD datasheet
sgh5n120rufd.pdf
September 2000 IGBT SGH5N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10 s @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.3 V @
sgh5n120ruf.pdf
IGBT SGH5N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) provides low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.3 V @ IC = 5A designed for
Otros transistores... SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , RJP30H2A , SGH80N60UF , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD .
History: IXA20I1200PB | STGW40V60DF | IXA12IF1200HB | KGT40N60KDA | SGL15N60RUFD | IXA17IF1200HJ
History: IXA20I1200PB | STGW40V60DF | IXA12IF1200HB | KGT40N60KDA | SGL15N60RUFD | IXA17IF1200HJ
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