SGH5N120RUFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGH5N120RUFD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 74 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 8 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 45 pF
Qgⓘ - Carga total de la puerta, typ: 28 nC
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de SGH5N120RUFD - IGBT
SGH5N120RUFD Datasheet (PDF)
sgh5n120rufd.pdf
September 2000 IGBTSGH5N120RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10s @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.3 V @
sgh5n120ruf.pdf
IGBTSGH5N120RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10s @ TC = 100C, VGE = 15V(IGBTs) provides low conduction and switching losses as High speed switchingwell as short circuit ruggedness. The RUF series is Low saturation voltage : VCE(sat) = 2.3 V @ IC = 5Adesigned for
Otros transistores... SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , FGH60N60SMD , SGH80N60UF , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2