SGH5N120RUFD IGBT. Datasheet pdf. Equivalent
Type Designator: SGH5N120RUFD
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 74 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 8 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 45 pF
Package: TO3P
SGH5N120RUFD Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGH5N120RUFD Datasheet (PDF)
sgh5n120rufd.pdf
September 2000 IGBTSGH5N120RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10s @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.3 V @
sgh5n120ruf.pdf
IGBTSGH5N120RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10s @ TC = 100C, VGE = 15V(IGBTs) provides low conduction and switching losses as High speed switchingwell as short circuit ruggedness. The RUF series is Low saturation voltage : VCE(sat) = 2.3 V @ IC = 5Adesigned for
Datasheet: SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , FGH60N60SMD , SGH80N60UF , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD .
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