SGH5N120RUFD Datasheet and Replacement

September 2000 IGBTSGH5N120RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10s @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.3 V @

IGBTSGH5N120RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10s @ TC = 100C, VGE = 15V(IGBTs) provides low conduction and switching losses as High speed switchingwell as short circuit ruggedness. The RUF series is Low saturation voltage : VCE(sat) = 2.3 V @ IC = 5Adesigned for