SGH80N60UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGH80N60UF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 195 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 350 pF
Qgⓘ - Carga total de la puerta, typ: 175 nC
Paquete / Cubierta: TO3P
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SGH80N60UF Datasheet (PDF)
sgh80n60uf.pdf
IGBTSGH80N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed sw
sgh80n60uf.pdf
N-CHANNEL IGBT SGH80N60UFFEATURESTO-3P* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=40A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter VoltageV
sgh80n60ufd.pdf
September 2000 IGBTSGH80N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switchingseries provides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 40AUFD seriesis designed for the applications such as motor High Input Impedancecontrol and general inverters where H
sgh80n60ufd.pdf
N-CHANNEL IGBT SGH80N60UFDFEATURESTO-3P* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=40A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 50nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteri
Otros transistores... SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , RJP30E2DPP-M0 , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2