SGH80N60UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IGBTSGH80N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed sw

N-CHANNEL IGBT SGH80N60UFFEATURESTO-3P* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=40A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter VoltageV

September 2000 IGBTSGH80N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switchingseries provides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 40AUFD seriesis designed for the applications such as motor High Input Impedancecontrol and general inverters where H

N-CHANNEL IGBT SGH80N60UFDFEATURESTO-3P* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=40A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 50nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteri