SGH80N60UF Todos los transistores

 

SGH80N60UF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGH80N60UF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 195 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 350 pF
   Paquete / Cubierta: TO3P
 

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SGH80N60UF datasheet

 ..1. Size:603K  fairchild semi
sgh80n60uf.pdf pdf_icon

SGH80N60UF

IGBT SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 40A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed sw

 ..2. Size:225K  samsung
sgh80n60uf.pdf pdf_icon

SGH80N60UF

N-CHANNEL IGBT SGH80N60UF FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=40A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage V

 0.1. Size:649K  fairchild semi
sgh80n60ufd.pdf pdf_icon

SGH80N60UF

September 2000 IGBT SGH80N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switching series provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 2.1 V @ IC = 40A UFD seriesis designed for the applications such as motor High Input Impedance control and general inverters where H

 0.2. Size:264K  samsung
sgh80n60ufd.pdf pdf_icon

SGH80N60UF

N-CHANNEL IGBT SGH80N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=40A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 50nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteri

Otros transistores... SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGT50T65FD1PT , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD .

 

 

 


 
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