SGH80N60UF Datasheet. Specs and Replacement

Type Designator: SGH80N60UF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 195 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 350 pF

Package: TO3P

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SGH80N60UF datasheet

 ..1. Size:603K  fairchild semi
 sgh80n60uf.pdf pdf_icon

SGH80N60UF

IGBT SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 40A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed sw... See More ⇒

 ..2. Size:225K  samsung
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SGH80N60UF

N-CHANNEL IGBT SGH80N60UF FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=40A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage V... See More ⇒

 0.1. Size:649K  fairchild semi
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SGH80N60UF

September 2000 IGBT SGH80N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switching series provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 2.1 V @ IC = 40A UFD seriesis designed for the applications such as motor High Input Impedance control and general inverters where H... See More ⇒

 0.2. Size:264K  samsung
 sgh80n60ufd.pdf pdf_icon

SGH80N60UF

N-CHANNEL IGBT SGH80N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=40A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 50nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteri... See More ⇒

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Specs: SGH23N60UFD, SGH25N120RUF, SGH30N60RUF, SGH30N60RUFD, SGH40N60UF, SGH40N60UFD, SGH5N120RUF, SGH5N120RUFD, G50T65D, SGH80N60UFD, SGI25N40, SGL10N60RUFD, SGL15N60RUFD, SGL160N60UFD, SGL20N60RUFD, SGL25N120RUFD, SGL30N60RUFD

Keywords - SGH80N60UF transistor spec

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