SGH80N60UF PDF and Equivalents Search

 

SGH80N60UF PDF Specs and Replacement


   Type Designator: SGH80N60UF
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 195 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   tr ⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 350 pF
   Package: TO3P
 

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SGH80N60UF PDF specs

 ..1. Size:603K  fairchild semi
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SGH80N60UF

IGBT SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 40A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed sw... See More ⇒

 ..2. Size:225K  samsung
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SGH80N60UF

N-CHANNEL IGBT SGH80N60UF FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=40A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage V... See More ⇒

 0.1. Size:649K  fairchild semi
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SGH80N60UF

September 2000 IGBT SGH80N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switching series provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 2.1 V @ IC = 40A UFD seriesis designed for the applications such as motor High Input Impedance control and general inverters where H... See More ⇒

 0.2. Size:264K  samsung
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SGH80N60UF

N-CHANNEL IGBT SGH80N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=40A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 50nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteri... See More ⇒

Specs: SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGT50T65FD1PT , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD .

Keywords - SGH80N60UF transistor spec

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