IGC109T120T6RM Todos los transistores

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IGC109T120T6RM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGC109T120T6RM

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.8

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 110

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación:

Capacitancia de salida (Cc), pF: 440

Empaquetado / Estuche: CHIP

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IGC109T120T6RM Datasheet (PDF)

1.1. sigc109t120r3le.pdf Size:235K _igbt

IGC109T120T6RM
IGC109T120T6RM

 SIGC109T120R3LE IGBT3 Power Chip Features: This chip is used for:  1200V Trench & Field Stop technology  power modules C  low turn-off losses  short tail current Applications:  positive temperature coefficient  drives  easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Param

1.2. sigc109t120r3l.pdf Size:127K _igbt

IGC109T120T6RM
IGC109T120T6RM

 SIGC109T120R3LE IGBT3 Chip Features: This chip is used for: • 1200V Trench & Field Stop technology • power modules C • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives • easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Parameters R

 1.3. sigc109t120r3e.pdf Size:236K _igbt

IGC109T120T6RM
IGC109T120T6RM

 SIGC109T120R3E IGBT3 Power Chip Features: This chip is used for:  1200V Trench & Field Stop technology  power modules C  low turn-off losses  short tail current Applications:  positive temperature coefficient  drives  easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3E 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Paramet

1.4. igc109t120t6rl.pdf Size:72K _igbt_a

IGC109T120T6RM
IGC109T120T6RM

 IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology This chip is used for: C • low switching losses • low / medium power modules • positive temperature coefficient • easy paralleling Applications: G • low / medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2 sawn on foil MECHA

 1.5. igc109t120t6rm.pdf Size:71K _igbt_a

IGC109T120T6RM
IGC109T120T6RM

 IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology This chip is used for: C • low switching losses • medium power modules • soft turn off • positive temperature coefficient Applications: • easy paralleling G • medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RM 1200V 110A 7.48 x 14.61 mm2 sawn on f

1.6. igc109t120t6rh.pdf Size:74K _igbt_a

IGC109T120T6RM
IGC109T120T6RM

 IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology This chip is used for: C • low V • medium / high power modules CE(sat) • soft turn off • positive temperature coefficient Applications: • easy paralleling G • medium / high power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 saw

Otros transistores... IGC04R60DE , IGC05R60D , IGC05R60DE , IGC06R60D , IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , SKW30N60HS , IGC10R60D , IGC10R60DE , IGC10T65QE , IGC114T170S8RH , IGC114T170S8RM , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL .

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